![]() But this newly-developed ScAlN/AlGaN/GaN FeHEMT offers additional advantages. HEMTs are typically found in the high-frequency, high-power amplifiers used for communications in cell phones. These characteristics breed new functionalities and emerging applications, according to the authors, giving the boost in performance needed for high-power, high-frequency electronics. ![]() In earlier research, Ding Wang (left) and Ping Wang achieve ferroelectricity in III-V semiconductors for the first time, using MBE to create the material.īecause the device is ferroelectric and tunable, the polarization can be switched back and forth as needed while operating the device to improve its performance – even in the subthreshold realm. MBE is also one of the preferred methods to manufacture mainstream nitride-based devices. The device structure was grown using molecular beam epitaxy (MBE), which allowed the team to control the thickness of the material at an atomic scale. ![]() This is a pivotal step toward integrating nitride ferroelectrics with mainstream electronics. They quickly followed this with the current demonstration of a ScAlN/AlGaN/GaN ferroelectric HEMT transistor. It was the first ferroelectric nitride semiconductor. Mi’s team recently reported on a breakthrough nanoscale CMOS-compatible ScAlN ferroelectric semiconductor material that could serve as a bridge between mainstream and next-generation computing. That’s a game changer for many applications.” Zetian Mi who led the research, “it opens up the possibility for integrating multifunctional devices, such as reconfigurable transistors, filters, and resonators, on the same platform – all while operating at very high frequency and high power. “By realizing this new type of transistor,” said Prof. Areas of particular interest for this device are reconfigurable RF/microwave applications as well as memory devices in next generation electronics and computing systems. Researchers at the University of Michigan have developed a reconfigurable, ferroelectric high electron mobility transistor (FeHEMT) that is ideal for high frequency and high power applications. Photo by Marcin Szczepanski/Lead Multimedia Storyteller, Michigan Engineering Ding Wang are working on the epitaxy and fabrication of ferroelectric HEMTs based on a new nitride material, ScAlN, which has been demonstrated recently as a promising high-k and ferroelectric gate dielectric that can foster new functionalities and boost device performances. Zetian Mi’s team proved the viability of a reconfigurable, ScAlN/AlGaN/GaN ferroelectric HEMT transistor that is critical for next-generation communication and computing systems Master’s student Minming He (left) and Dr.
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